Performance Analysis of Double Gate n-FinFET Using High-k Dielectric Materials
نویسندگان
چکیده
To extend the use of CMOS technology beyond 14 nm node technology, new device materials are required that can enhance the performance of MOSFETs. The use of high-k materials in double gate (DG) MOSFET can triumph over the problem of power dissipation and leakage current. In this paper, we investigated various high-k dielectrics as the gate oxides in a 12 nm SOI FinFET and the performance potential of SiO2, SiON, Al2O3, Y2O3, HfO2 and La2O3 gate dielectrics for Si based DG-FinFET has been explored based on 2-D numerical simulations. The results demonstrate that La2O3 can replace SiO2, SiON, Al2O3, Y2O3 and HfO2 owing to its high transconductance, reduced sub-threshold swing (~ 40 %), increased threshold voltage and reduced DIBL (~ 81%).
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